Effect of self-heating on electrical characteristics of AlGaN/ GaN HEMT on Si (111) substrate
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چکیده
منابع مشابه
ELECTRICAL CHARACTERIZATION OF AlGaN/GaN HEMTs ON Si SUBSTRATE
Deep traps in AlGaN/GaN high electron mobility transistors on silicon substrate were characterized by the means of current-voltage and Deep Level Transient Spectroscopy (DLTS). DLTS measurements have revealed only hole-trap with an activation energy of 0.82eV. The nature and the localization of this trap are discussed here.
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Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate Citation
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. AlGaN/GaN high electron mobility transistors (HEMTs) grown on Si substrates have attracted a great interest for pow...
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.4990868